2N1760 Transistor Germanium - CASE: MS7 MAKE: National Semiconductor
2N1760 Transistor Germanium - CASE: MS7 MAKE: National Semiconductor
Attributes
| Brand name, Manufacturer name, Manufacturer | National Semiconductor |
|---|---|
| keywords | Buy 2N1760, 2N1760, 2N1760 Transistor Germanium |
| moq, multiple, tierMinQty1 | 1 |
| MPN, SKU | 2N1760 |
| originalCurrency | {'currency': 'GBP', 'tierPrice1': '31.91'} |
| qtyInStock | 23 |
| snippet | 2N1760 Transistor Germanium - CASE: MS7 MAKE: National Semiconductor |
| tierPrice1 | 35.654638500000004 |
| Case | MS7 |
| Type | Transistor Germanium PNP |
| Vbr CBO, Min hFE, Forward Current Transfer Ratio (hFE), MIN | 60 |
| Vbr CEO | 50 |
| Max PD (W) | 28 |
| Max hFE | 150 |
| Ic Max (A) | 3.0 |
| @Ic (test) (A) | 500m |
| Icbo Max @Vcb Max (A) | 3.0m |
| Polarity | PNP |
| Tr Max (s) | 3.5u |
| R(sat) (?) | 160m |
| Derate Above 25?C | 400m |
| Trans Freq (Hz) Min | 15k |
| Oper Temp (?C) Max | 100 |
| @VCE (V) | 2.0 |
| Pinout Equivalence Number | N/A |
| Surface Mounted Yes/No | NO |
| Maximum Collector Power Dissipation (Pc) | 28 W |
| Maximum Collector-Base Voltage |Vcb| | 60 V |
| Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Maximum Emitter-Base Voltage |Veb| | 30 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max Operating Junction Temperature (Tj) | 95 ?C |
| Transition Frequency (ft): | 0.15 MHz |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | 2N1760 | 1 | 23 | 1 | 1 @ $35.65 |