2SA1011D SemiConductor - CASE: Standard MAKE: Generic
2SA1011D SemiConductor - CASE: Standard MAKE: Generic
Attributes
| Brand name, Manufacturer name, Manufacturer | Generic |
|---|---|
| keywords | Buy 2SA1011D, 2SA1011D, 2SA1011D SemiConductor |
| moq, multiple | 1 |
| MPN, SKU | 2SA1011D |
| originalCurrency | {'currency': 'GBP'} |
| qtyInStock | 0 |
| snippet | 2SA1011D SemiConductor - CASE: Standard MAKE: Generic |
| Case | TO220 |
| Type | Transistor Silicon PNP |
| Vbr CBO | 180 |
| Vbr CEO | 160 |
| Max PD (W) | 25 |
| Derate (Amb) (W/?C) | 178m |
| Max hFE | 120 |
| Min hFE, Forward Current Transfer Ratio (hFE), MIN | 60 |
| Ic Max (A) | 1.5 |
| @Ic (test) (A) | 300m |
| Icbo Max @Vcb Max (A) | 10u |
| Polarity | PNP |
| Trans Freq (Hz) Min | 120M |
| Oper Temp (?C) Max | 140 |
| @VCE (V) | 5.0 |
| Pinout Equivalence Number | 3-15 |
| Surface Mounted Yes/No | NO |
| Maximum Collector Power Dissipation (Pc) | 25 W |
| Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce| | 180 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 1.5 A |
| Max Operating Junction Temperature (Tj) | 175 ?C |
| Collector Capacitance (Cc) | 30 pF |
| Transition Frequency (ft): | 100 MHz |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | 2SA1011D | 1 | 1 |