Descript (page 2 / 6)

1.0mA max standby current
1.0mW typical per bit
1.0s typ.Erase Time
1.1mW CMOS stdby & OE control
1.1mW CMOS stdby with dual CE
1.1mW max standby
1.2 Inch,5x7 Dot Matrix
1.2mA Standby Current.
1.2mA max standby
1.4 Inch,5x8 Dot Matrix
1.4 to 16V supply voltage.
1.5MHz bus timing
1.8 Inch 24 Hour Clock
1.8 Inch Clock Display
1.8 Inch,Single Digit
1.85 Inch,5x8 Dot Matrix
1/200 Duty; Transmissive-Type
1/4 PWR version
1/4 power version
1/64 Duty; Reflective-Type
10
10 Bit end point linearity
10 PPS version; Tone/Pulse with 32 digit redial
10 Year Data Retention w/o PWR
10 comb;10 registers
10 year retention
10,000 Rewrites
10-bit ADC;2-serial interface(UART&I2C)
10-latches;ICC 210mA
10-year data retention
100
100 year data retention
100% 100k ECL compatible
100% 10k ECL compatible
100,000 cycles
100K
100K ECL Compatible
100K ECL I/O levels
100K ECL I/O;typ t(rise)=500ps
100K ECL RAM
100K ECL SRAM;BiCMOS
100K I/O Compatible
100K-Compatible
100K-series ECL RAM
100KSPS:500k Full Pwr BW
100MHz Toggle Rate
100MHz to 18GHz;30dB typical noise ratio;800mW max power consumption
100MHzRate, 100kRads(Si)
100MHzRate, 300kRads(Si)
100MHzRate,1000kRads(Si)
100MHzRate,RadHardProcess
100Wr/Erase Cycles
100dB typ. CMRR
100k ECL Compatible
100k ECL SRAM;BiCMOS
100k Series ECL Compatible
100k WR cycle vers
100k write cycles
100mA typ active
100mA typ. active
100mW standby;Single 5V supply
100mW typical when deselected
100nsCycleTime, 300kRads(Si)
100nsCycleTime,Rad.HardProcess
100us/b programming
101K ECL I/O levels
101K ECL I/O;typ t(rise)=500ps
1024 Cycle Refresh-16ms
1024 Refresh Cycles/16m
1024 Refresh Cycles/16ms
1024 refresh cycles/16ms.
1024 x 1 SRAM/1enable
1024 x 4 SRAM/1enable
1024x1 static ram
10E I/O;IEE 150mA
10E I/O;IEE 190mA
10K
10K ECL I/O levels
10K ECL I/O;typ t(rise)=500ps
10K ECL RAM
10K prog.cycles min
10K/10KH Compatible
10KH/10K compatible
10V Internal Reference
10k ECL SRAM;BiCMOS
10k ECL series compatible
10k Series Compatible
10k Store Cycles
10kHz Max. Rec. Oper. Freq;Stud is Anode
10kHz Max. Recommended Operating Freq.
10mA max stdby
10mS Write Time Max
10mS Write Time.
10mW typical active
10ms Byte Write
10ms Max Byte Write
10ms Write Cycle
10yr data retention
10yrDataRetention
110 MBPS Update Rate