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KSR2106 Transistor - CASE: SOT23 MAKE: Samsung

Samsung . KSR2106

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
keywordsBuy KSR2106, KSR2106, KSR2106 SI-PNP-DIGI
moq, multiple1
MPN, SKUKSR2106
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetKSR2106 Transistor - CASE: SOT23 MAKE: Samsung
TypeTransistor Silicon Pre-Biased-PNP
CaseSOT23
MatSilicon Logic
PolarityPre-Biased-PNP
Mat StructPNP
Pinout Equivalence Number3-14
Surface Mounted Yes/NoYES
Maximum Collector Power Dissipation (Pc)0.2 W
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce|50 V
Maximum Emitter-Base Voltage |Veb|10 V
Maximum Collector Current |Ic max|0.1 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)5.5 pF
Transition Frequency (ft):200 MHz
Forward Current Transfer Ratio (hFE), MIN68
SMD Transistor CodeR56
Built in Bias Resistor R110 kOhm
Built in Bias Resistor R247 kOhm
Typical Resistor Ratio R1/R20.21

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Little DiodeKSR210611