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KSR2006 Transistor - CASE: TO92 MAKE: Samsung

Samsung . KSR2006

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
keywordsBuy KSR2006, KSR2006, KSR2006 Transistor
moq, multiple1
MPN, SKUKSR2006
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetKSR2006 Transistor - CASE: TO92 MAKE: Samsung
CaseTO92
TypeTransistor Silicon Pre-Biased-PNP
MatSilicon Logic
PolarityPre-Biased-PNP
Mat StructPNP
Pinout Equivalence Number3-10
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)0.3 W
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce|50 V
Maximum Emitter-Base Voltage |Veb|10 V
Maximum Collector Current |Ic max|0.1 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)5.5 pF
Transition Frequency (ft):200 MHz
Forward Current Transfer Ratio (hFE), MIN68
Built in Bias Resistor R110 kOhm
Built in Bias Resistor R247 kOhm
Typical Resistor Ratio R1/R20.21

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