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KSR1110 Transistor - CASE: SOT23 MAKE: Samsung

Samsung . KSR1110

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
keywordsBuy KSR1110, KSR1110, KSR1110 SI-NPN-DIGI
moq, multiple1
MPN, SKUKSR1110
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetKSR1110 Transistor - CASE: SOT23 MAKE: Samsung
TypeTransistor Silicon Pre-Biased-NPN
CaseSOT23
MatSilicon Logic
PolarityPre-Biased-NPN
Mat StructNPN
Pinout Equivalence Number3-14
Surface Mounted Yes/NoYES
Maximum Collector Power Dissipation (Pc)0.2 W
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce|40 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|0.1 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)3.7 pF
Transition Frequency (ft):250 MHz
Forward Current Transfer Ratio (hFE), MIN100
SMD Transistor CodeR10
Built in Bias Resistor R110 kOhm

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