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Samsung . KSR1108

Samsung . KSR1108

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
moq, multiple, tierMinQty11
MPN, SKUKSR1108
originalCurrency{'currency': 'GBP', 'tierPrice1': '0.00'}
qtyInStock0
tierPrice10.0
TypeTransistor Silicon Pre-Biased-NPN
CaseSOT23
MatSilicon Logic
PolarityPre-Biased-NPN
Mat StructNPN
Pinout Equivalence Number3-14
Surface Mounted Yes/NoYES
Maximum Collector Power Dissipation (Pc)0.2 W
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce|50 V
Maximum Emitter-Base Voltage |Veb|10 V
Maximum Collector Current |Ic max|0.1 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)3.7 pF
Transition Frequency (ft):250 MHz
Forward Current Transfer Ratio (hFE), MIN56
SMD Transistor CodeR08
Built in Bias Resistor R147 kOhm
Built in Bias Resistor R222 kOhm
Typical Resistor Ratio R1/R22.1

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Little DiodeKSR1108111 @ $0.00