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Samsung . KSH200

Samsung . KSH200

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
moq, multiple, tierMinQty11
MPN, SKUKSH200
originalCurrency{'currency': 'GBP', 'tierPrice1': '0.00'}
qtyInStock0
tierPrice10.0
CaseTO252
TypeTransistor Silicon NPN
PolarityNPN
Maximum Collector Power Dissipation (Pc)12.5 W
Maximum Collector-Base Voltage |Vcb|40 V
Maximum Collector-Emitter Voltage |Vce|25 V
Maximum Emitter-Base Voltage |Veb|8 V
Maximum Collector Current |Ic max|5 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)80 pF
Transition Frequency (ft):65 MHz
Forward Current Transfer Ratio (hFE), MIN70

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Little DiodeKSH200111 @ $0.00