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KSD5011 Transistor - CASE: TO218iso MAKE: Samsung

Samsung . KSD5011

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
keywordsBuy KSD5011, KSD5011, KSD5011 Transistor
moq, multiple1
MPN, SKUKSD5011
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetKSD5011 Transistor - CASE: TO218iso MAKE: Samsung
CaseTO218F
TypeTransistor Silicon NPN
Vbr CBO1.5k
Vbr CEO800
Max PD (W)50
t(f) Max (S)400n
Min hFE8.0
Ic Max (A)3.5
@Ic (test) (A)500m
Icbo Max @Vcb Max (A)10u
PolarityNPN
Derate Above 25?C400m
Trans Freq (Hz) Min3M
Oper Temp (?C) Max150
@VCE (V)5.0
Pinout Equivalence Number3-15
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)50 W
Maximum Collector-Base Voltage |Vcb|1500 V
Maximum Collector-Emitter Voltage |Vce|800 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|3.5 A
Max Operating Junction Temperature (Tj)150 ?C
Forward Current Transfer Ratio (hFE), MIN8

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