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KSD363 Transistor - CASE: SOT78 MAKE: Samsung

Samsung . KSD363

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
keywordsBuy KSD363, KSD363, KSD363 Transistor
moq, multiple1
MPN, SKUKSD363
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetKSD363 Transistor - CASE: SOT78 MAKE: Samsung
TypeTransistor Silicon NPN
CaseSOT78
Vbr CBO300
Vbr CEO120
Max PD (W), Min hFE, Forward Current Transfer Ratio (hFE), MIN40
Max hFE240
Ic Max (A)6.0
@Ic (test) (A)1.0
Icbo Max @Vcb Max (A)1.0m
PolarityNPN
Derate Above 25?C320m
Trans Freq (Hz) Min10M
Oper Temp (?C) Max150
@VCE (V)5.0
Pinout Equivalence Number3-15
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)40 W
Maximum Collector-Base Voltage |Vcb|300 V
Maximum Collector-Emitter Voltage |Vce|120 V
Maximum Emitter-Base Voltage |Veb|8 V
Maximum Collector Current |Ic max|6 A
Max Operating Junction Temperature (Tj)150 ?C
Transition Frequency (ft):10 MHz

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