As an Amazon Associate, we earn from qualifying purchases. Home » Samsung » KSD261G KSD261G Transistor - CASE: TO92 MAKE: Samsung Samsung . KSD261G Attributes Brand name, Manufacturer name, ManufacturerSamsung keywordsBuy KSD261G, KSD261G, KSD261G Transistor moq, multiple1 MPN, SKUKSD261G originalCurrency{'currency': 'GBP'} qtyInStock0 snippetKSD261G Transistor - CASE: TO92 MAKE: Samsung TypeTransistor Silicon NPN CaseTO92 PolarityNPN Maximum Collector Power Dissipation (Pc)0.5 W Maximum Collector-Base Voltage |Vcb|40 V Maximum Collector-Emitter Voltage |Vce|20 V Maximum Emitter-Base Voltage |Veb|5 V Maximum Collector Current |Ic max|0.5 A Max Operating Junction Temperature (Tj)150 ?C Forward Current Transfer Ratio (hFE), MIN200 Distributor offers SellerSKUMOQIn stockMultiplePrices Little DiodeKSD261G11