KSD2012G Transistor - CASE: SOT186A MAKE: Samsung

Samsung . KSD2012G

Attributes

Brand name, Manufacturer name, Manufacturer	Samsung
keywords	Buy KSD2012G, KSD2012G, KSD2012G Transistor
moq, multiple	1
MPN, SKU	KSD2012G
originalCurrency	{'currency': 'GBP'}
qtyInStock	0
snippet	KSD2012G Transistor - CASE: SOT186A MAKE: Samsung
Case	SOT186A
Type	Transistor Silicon NPN
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|, Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	3 A
Max Operating Junction Temperature (Tj)	150 ?C
Transition Frequency (ft):	9 MHz
Forward Current Transfer Ratio (hFE), MIN	150

Distributor offers

Seller	SKU	MOQ	In stock	Multiple	Prices
Little Diode	KSD2012G	1		1