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Samsung . KSC1008G

Samsung . KSC1008G

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
moq, multiple, tierMinQty11
MPN, SKUKSC1008G
originalCurrency{'currency': 'GBP', 'tierPrice1': '0.00'}
qtyInStock0
tierPrice10.0
CaseTO92
TypeTransistor Silicon NPN
PolarityNPN
Maximum Collector Power Dissipation (Pc)0.8 W
Maximum Collector-Base Voltage |Vcb|80 V
Maximum Collector-Emitter Voltage |Vce|60 V
Maximum Emitter-Base Voltage |Veb|8 V
Maximum Collector Current |Ic max|0.7 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)8 pF
Transition Frequency (ft):30 MHz
Forward Current Transfer Ratio (hFE), MIN200

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Little DiodeKSC1008G111 @ $0.00