KSB1116G Transistor - CASE: TO92 MAKE: Samsung

Samsung . KSB1116G

Attributes

Brand name, Manufacturer name, Manufacturer	Samsung
keywords	Buy KSB1116G, KSB1116G, KSB1116G Transistor
moq, multiple	1
MPN, SKU	KSB1116G
originalCurrency	{'currency': 'GBP'}
qtyInStock	0
snippet	KSB1116G Transistor - CASE: TO92 MAKE: Samsung
Case	TO92
Type	Transistor Silicon PNP
Polarity	PNP
Maximum Collector Power Dissipation (Pc)	0.75 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1 A
Max Operating Junction Temperature (Tj)	150 ?C
Collector Capacitance (Cc)	2.5 pF
Transition Frequency (ft):	70 MHz
Forward Current Transfer Ratio (hFE), MIN	200

Distributor offers

Seller	SKU	MOQ	In stock	Multiple	Prices
Little Diode	KSB1116G	1		1