KSA812G Transistor - CASE: SOT23 MAKE: Samsung

Samsung . KSA812G

Attributes

Brand name, Manufacturer name, Manufacturer	Samsung
keywords	Buy KSA812G, KSA812G, KSA812G Transistor
moq, multiple	1
MPN, SKU	KSA812G
originalCurrency	{'currency': 'GBP'}
qtyInStock	0
snippet	KSA812G Transistor - CASE: SOT23 MAKE: Samsung
Type	Transistor Silicon PNP
Case	SOT23
Polarity	PNP
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max Operating Junction Temperature (Tj)	150 ?C
Collector Capacitance (Cc)	4.5 pF
Transition Frequency (ft):	180 MHz
Forward Current Transfer Ratio (hFE), MIN	200

Distributor offers

Seller	SKU	MOQ	In stock	Multiple	Prices
Little Diode	KSA812G	1		1