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KSB1116A Transistor - CASE: TO92 MAKE: Samsung

Samsung . KSB1116A

Attributes

Brand name, Manufacturer name, ManufacturerSamsung
keywordsBuy KSB1116A, KSB1116A, KSB1116A Transistor
moq, multiple1
MPN, SKUKSB1116A
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetKSB1116A Transistor - CASE: TO92 MAKE: Samsung
TypeTransistor Silicon PNP
CaseTO92
Vbr CBO80
Vbr CEO60
Max PD (W)750m
C(ob) (F)25p
Derate (Amb) (W/?C)6m
hfe, Forward Current Transfer Ratio (hFE), MIN135
Ic Max (A)1.0
Icbo Max @Vcb Max (A)100n
PolarityPNP
Trans Freq (Hz) Min70M
@VCE (test) (V)2.0
Oper Temp (?C) Max150
@Ic (A)100m
Pinout Equivalence Number3-10
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)0.75 W
Maximum Collector-Base Voltage |Vcb|80 V
Maximum Collector-Emitter Voltage |Vce|60 V
Maximum Emitter-Base Voltage |Veb|6 V
Maximum Collector Current |Ic max|1 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)2.5 pF
Transition Frequency (ft):70 MHz

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