Infineon Technologies . BUZ73 H3046
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Hotenda | H1843686 | 1 | 1 | ||
![]() swatee.com | BUZ73 H3046 | 1 | 26 | 1 | 1 @ $3.01 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET N-Channel 200V Transistor
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | BUZ73 H3046 |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 200V Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7 A Rds On - Drain-Source Resistance: 400 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 40 W Mounting Style: Through Hole Package / Case: I2PAK-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUZ73 H3046 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 200V Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7 A Rds On - Drain-Source Resistance: 400 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 40 W Mounting Style: Through Hole Package / Case: I2PAK-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUZ73 H3046 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 200V Transistor (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7 A Rds On - Drain-Source Resistance: 400 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 40 W Mounting Style: Through Hole Package / Case: I2PAK-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUZ73 H3046 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
