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BUZ31L H Infineon Technologies | Discrete Semiconductor Products | DigiKey

Infineon Technologies . BUZ31L-H

Attributes

Brand name, Manufacturer name, Manufacturer, MfrInfineon Technologies
Extra Product NameBUZ31L H Infineon Technologies | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPNBUZ31L-H
SKU2783512
snippetN-Channel 200 V 13.5A (Tc) 95W (Tc) Through Hole PG-TO220-3
CategoryDiscrete Semiconductor Products
SeriesSIPMOS?
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25?C13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs200mOhm @ 7A, 5V
Vgs(th) (Max) @ Id2V @ 1mA
Vgs (Max)?20V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V
FET Feature-
Power Dissipation (Max)95W (Tc)
Operating Temperature-55?C ~ 150?C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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Digi-Key278351211