Infineon Technologies . BUZ30A H3045A
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Hotenda | H1832524 | 1 | 1 | ||
 Digi-Key | 12101889 | 1 | 1 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
BUZ30A H3045A
Brand: Infineon
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | BUZ30A H3045A |
| Label | Infineon |
| Manufacturer | Infineon |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 130 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: SMD/SMT Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUZ30A H3045A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 200V Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 130 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: SMD/SMT Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUZ30A H3045A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 200V Transistor (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 130 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: SMD/SMT Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUZ30A H3045A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 200V Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 130 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: SMD/SMT Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUZ30A H3045A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 200V Transistor (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 130 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: SMD/SMT Package / Case: D2PAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUZ30A H3045A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |