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2N1659 SemiConductor - CASE: Standard MAKE: Solitron Devices

Solitron Devices . 2N1659

Attributes

Brand name, Manufacturer name, ManufacturerSolitron Devices
keywordsBuy 2N1659, 2N1659, 2N1659 SemiConductor
moq, multiple1
MPN, SKU2N1659
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippet2N1659 SemiConductor - CASE: Standard MAKE: Solitron Devices
CaseMT9
TypeTransistor Germanium PNP
Vbr CBO60
Vbr CEO40
Max PD (W)15
Max hFE90
Min hFE, Forward Current Transfer Ratio (hFE), MIN30
Ic Max (A)1.0
@Ic (test) (A), Derate Above 25?C200m
Icbo Max @Vcb Max (A)500u
PolarityPNP
Tr Max (s)5.0u
R(sat) (?)250m
Trans Freq (Hz) Min500k
Oper Temp (?C) Max100
@VCE (V)2.0
Pinout Equivalence NumberN/A
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)85 W
Maximum Collector-Base Voltage |Vcb|60 V
Maximum Collector-Emitter Voltage |Vce|, Maximum Emitter-Base Voltage |Veb|40 V
Maximum Collector Current |Ic max|1 A
Max Operating Junction Temperature (Tj)100 ?C
Transition Frequency (ft):20 MHz

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