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HN1C03F Transistor - CASE: SOT6 MAKE: Toshiba

Toshiba . HN1C03F

Attributes

Brand name, Manufacturer name, ManufacturerToshiba
keywordsBuy HN1C03F, HN1C03F, HN1C03F Transistor
moq, multiple1
MPN, SKUHN1C03F
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetHN1C03F Transistor - CASE: SOT6 MAKE: Toshiba
TypeTransistor Silicon NPN
CaseSOT6
PolarityNPN
Maximum Collector Power Dissipation (Pc)0.3 W
Maximum Collector-Base Voltage |Vcb|50 V
Maximum Collector-Emitter Voltage |Vce|20 V
Maximum Emitter-Base Voltage |Veb|25 V
Maximum Collector Current |Ic max|0.3 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)4.8 pF
Transition Frequency (ft):30 MHz
Forward Current Transfer Ratio (hFE), MIN200
SMD Transistor CodeC3A_C3B

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