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Toshiba . HN1B04FU-Y(TE85L,F

Toshiba . HN1B04FU-Y(TE85L,F

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Attributes

Brand name, Manufacturer name, Manufacturer, BrandToshiba
jsonUrlData7560580
moq, multiple, tierMinQty110
MPNHN1B04FU-Y(TE85L,F
SKU756-0580
tierMinQty2150
tierMinQty3300
tierMinQty4600
tierMinQty51200
tierPrice10.159
tierPrice20.119
tierPrice30.103
tierPrice40.087
tierPrice50.072
Maximum Collector Emitter Saturation Voltage0.25 (NPN) V, -0.3 (PNP) V
Maximum Operating Temperature+125 °C
Maximum Operating Frequency120 (PNP) MHz, 150 (NPN) MHz
Number of Elements per Chip2
Length2mm
Transistor ConfigurationIsolated
Maximum Collector Base Voltage-50 V, 60 V
Maximum Collector Emitter Voltage50 V
Package TypeUS
Maximum Power Dissipation200 mW
Mounting TypeSurface Mount
Width1.25mm
Maximum DC Collector Current150 mA
Transistor TypeNPN + PNP
HeightHeight
Pin CountPin Count
DimensionsDimensions
Maximum Emitter Base VoltageMaximum Emitter Base Voltage
Minimum DC Current GainMinimum DC Current Gain

Distributor offers

SellerSKUMOQIn stockMultiplePrices
RS Delivers756-0580101010 @ $0.16, 150 @ $0.12, 300 @ $0.10, 600 @ $0.09, 1200 @ $0.07