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TOSHIBA GT50JR22(STA1,E,S) | Transistor: IGBT; 600V; 44A; 115W; TO3PN

TOSHIBA . GT50JR22(STA1,E,S)

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Attributes

Brand name, Manufacturer name, ManufacturerTOSHIBA
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3IGBT transistors and modules
CategoryL4IGBT transistors
Extra Product NameTOSHIBA GT50JR22(STA1,E,S) | Transistor: IGBT; 600V; 44A; 115W; TO3PN
atoms, moq, multiple, tierMinQty11
jsonUrlDataf7eccead752cb9a0a030fb503b27ea43.
jsonUrlData2e0f6c05b528f1dfec66f
keywordsTOSHIBA, GT50JR22(STA1,E,S), GT50JR22, Semiconductors, Transistors, IGBT transistors and modules, IGBT transistors, THT IGBT transistors
MPNGT50JR22(STA1,E,S)
qtyInStock134
SKUGT50JR22
snippetTOSHIBA GT50JR22(STA1,E,S) | Transistor: IGBT; 600V; 44A; 115W; TO3P
tierMinQty23
tierMinQty310
tierMinQty425
tierPrice15.99
tierPrice25.38
tierPrice34.76
tierPrice44.28
Type of transistorIGBT
Collector-emitter voltage600V
Collector current44A
Power dissipation115W
CaseTO3PN
Gate-emitter voltage?25V
Pulsed collector current100A
MountingTHT
Kind of packagetube
Turn-on time250ns
Turn-off time330ns
Features of semiconductor devicesintegrated anti-parallel diode

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEGT50JR22113411 @ $5.99, 3 @ $5.38, 10 @ $4.76, 25 @ $4.28
Newark09AK408016911 @ $5.30, 10 @ $4.61, 25 @ $3.98, 50 @ $3.77, 100 @ $3.55, 250 @ $3.40, 500 @ $3.26
Digi-Key166783861125 @ $4.19