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TOSHIBA GT50JR21(STA1,E,S) | Transistor: IGBT; 600V; 49A; 230W; TO3PN

TOSHIBA . GT50JR21(STA1,E,S)

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Attributes

Brand name, Manufacturer name, ManufacturerTOSHIBA
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3IGBT transistors and modules
CategoryL4IGBT transistors
Extra Product NameTOSHIBA GT50JR21(STA1,E,S) | Transistor: IGBT; 600V; 49A; 230W; TO3PN
atoms, moq, multiple, tierMinQty11
jsonUrlData8cc02f3e22a9f07467515b75a392e7bf.
jsonUrlData2ad2204ffb76a3e62d66f
keywordsTOSHIBA, GT50JR21(STA1,E,S), GT50JR21
MPNGT50JR21(STA1,E,S)
qtyInStock0
SKUGT50JR21
snippetTOSHIBA GT50JR21(STA1,E,S) | Transistor: IGBT; 600V; 49A; 230W; TO3P
tierMinQty23
tierMinQty310
tierMinQty425
tierPrice16
tierPrice25.39
tierPrice34.77
tierPrice44.29
Type of transistorIGBT
Collector-emitter voltage600V
Collector current49A
Power dissipation230W
CaseTO3PN
Gate-emitter voltage?25V
Pulsed collector current100A
MountingTHT
Kind of packagetube
Turn-on time430ns
Turn-off time720ns
Features of semiconductor devicesintegrated anti-parallel diode

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEGT50JR21111 @ $6.00, 3 @ $5.39, 10 @ $4.77, 25 @ $4.29
Digi-Key166784331125 @ $4.19