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2N1170 Transistor Germanium N Channel - CASE: TO5 MAKE: Motorola

Motorola . 2N1170

Attributes

Brand name, Manufacturer name, ManufacturerMotorola
keywordsBuy 2N1170, 2N1170, 2N1170 Transistor Germanium N Channel
moq, multiple, tierMinQty11
MPN, SKU2N1170
originalCurrency{'currency': 'GBP', 'tierPrice1': '15.95'}
qtyInStock4
snippet2N1170 Transistor Germanium N Channel - CASE: TO5 MAKE: Motorola
tierPrice117.8217325
TypeTransistor Germanium NPN
CaseTO5
Min hFE, Forward Current Transfer Ratio (hFE), MIN20
@Ic (test) (A)200m
Icbo Max @Vcb Max (A)8.0u
MatGermanium
Polarity, Mat StructNPN
@VCE (V)300m
Pinout Equivalence Number3-12
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)0.15 W
Maximum Collector-Base Voltage |Vcb|, Maximum Emitter-Base Voltage |Veb|40 V
Maximum Collector-Emitter Voltage |Vce|20 V
Maximum Collector Current |Ic max|0.4 A
Max Operating Junction Temperature (Tj)85 ?C
Transition Frequency (ft):3 MHz

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