SI4136DY-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products | DigiKey

MOSFET, N CHANNEL, 20V, 0.00155OHM, 46A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:46A; On Resistance Rds(on):0.00155ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

VISHAY SILICONIX SI4136DY-T1-GE3 MOSFET, N CH, 20V, 0.00155OHM, 46A, SOIC-8

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.2 Maximum Continuous Drain Current (A): 46 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 2@10V Typical Gate Charge @ Vgs (nC): 34@4.5V|73@10V Typical Gate Charge @ 10V (nC): 73 Typical Input Capacitance @ Vds (pF): 4560@10V Maximum Power Dissipation (mW): 3500 Typical Fall Time (ns): 23 Typical Rise Time (ns): 26 Typical Turn-Off Delay Time (ns): 50 Typical Turn-On Delay Time (ns): 34 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: SOIC N Pin Count: 8 Standard Package Name: SOP Mounting: Surface Mount Package Height: 1.55(Max) Package Length: 5(Max) Package Width: 4(Max) PCB changed: 8 Lead Shape: Gull-wing