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IRF9530STRLPBF Vishay Siliconix | Discrete Semiconductor Products | DigiKey

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Attributes

Brand name, Manufacturer name, MfrVishay Siliconix
ManufacturerVishay Siliconix SILICONIX (VISHAY) Vishay
CategoryL1, CategoryDiscrete Semiconductor Products
CategoryL2Transistors
CategoryL3FETs, MOSFETs
Extra Product NameIRF9530STRLPBF Vishay Siliconix | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty1, Item_package_quantity, PackageQuantity1
extraShipping0
MPN, Part Number, Model, Manufacturer Product Number, ModelNumber, Model_number, PartNumber, Part_numberIRF9530STRLPBF
packagingCut Tape (CT) & Digi-Reel?
qtyInStock321
SKU856683
snippet, Detailed DescriptionP-Channel 100 V 12A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D?PAK (TO-263)
tariff1.2
tierMinQty210
tierMinQty3100
tierMinQty4, Case800
tierPrice13.1559999999999997
tierPrice22.838
tierPrice32.2812
tierPrice41.874256
Product GroupBISS
Digi-Key Part NumberIRF9530STRLPBFTR-ND - Tape & Reel (TR)
DescriptionMOSFET P-CH 100V 12A D2PAK
Manufacturer Standard Lead Time17 Weeks
Series, FET Feature-
PackageTape & Reel (TR)
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25?C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id4V @ 250?A
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Vgs (Max)?20V
Input Capacitance (Ciss) (Max) @ Vds860 pF @ 25 V
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Operating Temperature-55?C ~ 175?C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD?PAK (TO-263)
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Base Product NumberIRF9530
ASIN, AsinB0731NYRQV B09T5Z1DRB
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
Brand, Label, Publisher, StudioSILICONIX (VISHAY) Vishay
Bullet_pointChannelType: P-Channel Drain-sourceOnResistance-Max: 0.3 Ω QgGateCharge: 38 nC RatedPowerDissipation(P): 3.7 W VoltageDraintoSource: 100 V
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161
ClassificationId306506011 306919011
DisplayNameIndustrial Electrical MOSFET
FeatureChannelType: P-Channel
Height150 243 56 75
Identifier6098017565593
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_name, TitleIRF9530STRLPBF, Trans MOSFET P-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R (25 Items) SILICONIX (VISHAY) IRF9530STRLPBF IRF9530S Series 100 V 12 A 0.3 Ohm SMT P-Channel Power Mosfet - TO-263AB - 800 item(s)
Item_type_keywordelectronic-components mosfet-transistors
Item_weight2.31
KeywordIRF9530S IRF9530STRLPBF
Linkhttps://m.media-amazon.com/images/I/11AjHi1k7PL._SL75_.jpg https://m.media-amazon.com/images/I/11AjHi1k7PL.jpg https://m.media-amazon.com/images/I/11LILwBWaNL._SL75_.jpg https://m.media-amazon.com/images/I/11LILwBWaNL.jpg
ManSILICONIX (VISHAY)
NumberOfItems, Number_of_items25 800
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameBISS ELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 175 Maximum Continuous Drain Current (A): 12 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 100 Maximum Drain Source Resistance (mOhm): 300@10V Typical Gate Charge @ Vgs (nC): 38(Max)@10V Typical Gate Charge @ 10V (nC): 38(Max) Typical Gate to Drain Charge (nC): 21(Max) Typical Gate to Source Charge (nC): 6.8(Max) Typical Reverse Recovery Charge (nC): 460 Typical Input Capacitance @ Vds (pF): 860@25V Typical Reverse Transfer Capacitance @ Vds (pF): 93@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 340 Maximum Power Dissipation (mW): 3700 Typical Fall Time (ns): 39 Typical Rise Time (ns): 52 Typical Turn-Off Delay Time (ns): 31 Typical Turn-On Delay Time (ns): 12 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 3.7 Maximum Pulsed Drain Current @ TC=25°C (A): 48 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 40 Typical Gate Plateau Voltage (V): 6.8 Typical Reverse Recovery Time (ns): 120 Maximum Diode Forward Voltage (V): 6.3 Minimum Gate Resistance (Ohm): 0.4 Maximum Gate Resistance (Ohm): 3.3 Maximum Positive Gate Source Voltage (V): 20 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab IRF9530S Series 100 V 12 A 0.3 Ohm SMT P-Channel Power Mosfet - TO-263AB ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-06-21T18:29:12.601Z 2022-02-18T20:14:20.198Z
Supplier_declared_dg_hz_regulationunknown
Typeean
URLhttps://m.media-amazon.com/images/I/11AjHi1k7PL._SL75_.jpg https://m.media-amazon.com/images/I/11LILwBWaNL._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625 0.0050926782522
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key856683132111 @ $3.16, 10 @ $2.84, 100 @ $2.28, 800 @ $1.87
Newark05W6875800800250 @ $2.15
RadwellIRF9530STRLPBF8008001 @ $2.27
1SourceIRF9530STRLPBF11
HotendaH18137398001600800800 @ $1.49
Future Electronics303712580016000800800 @ $0.78
swatee.comIRF9530STRLPBF199511 @ $4.65
iodPartsIRF9530STRLPBF250800250250 @ $1.24, 1050 @ $1.07
Digi-Key37587261001001 @ $3.17, 10 @ $2.85, 100 @ $2.29
Digi-Key37586351001001 @ $3.17, 10 @ $2.85, 100 @ $2.29
Newark31K23188008001 @ $1.47, 1000 @ $1.38, 2000 @ $1.30, 4000 @ $1.18, 6000 @ $1.13, 10000 @ $1.09
Newark56AJ9927185911 @ $2.44, 10 @ $2.09, 25 @ $1.98, 50 @ $1.85, 100 @ $1.74, 250 @ $1.73
GalcoIRF9530STRLPBF-VISH8008001 @ $1.15

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SILICONIX (VISHAY) IRF9530STRLPBF IRF9530S Series 100 V 12 A 0.3 Ohm SMT P-Channel Power Mosfet - TO-263AB - 800 item(s)
Brand: SILICONIX (VISHAY)
IRF9530S Series 100 V 12 A 0.3 Ohm SMT P-Channel Power Mosfet - TO-263AB ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: P-Channel
  • VoltageDraintoSource: 100 V
  • Drain-sourceOnResistance-Max: 0.3 Ω
  • QgGateCharge: 38 nC
  • RatedPowerDissipation(P): 3.7 W
Listing
Product groupBISS
Product typeBISS
ModelIRF9530STRLPBF
Part numberIRF9530STRLPBF
Items per pack800
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
Catalog
FeatureChannelType: P-Channel
CategoryIndustrial & Scientific
MPNIRF9530STRLPBF
Product groupBISS
Product typeBISS
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
IRF9530STRLPBF, Trans MOSFET P-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 175 Maximum Continuous Drain Current (A): 12 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 100 Maximum Drain Source Resistance (mOhm): 300@10V Typical Gate Charge @ Vgs (nC): 38(Max)@10V Typical Gate Charge @ 10V (nC): 38(Max) Typical Gate to Drain Charge (nC): 21(Max) Typical Gate to Source Charge (nC): 6.8(Max) Typical Reverse Recovery Charge (nC): 460 Typical Input Capacitance @ Vds (pF): 860@25V Typical Reverse Transfer Capacitance @ Vds (pF): 93@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 340 Maximum Power Dissipation (mW): 3700 Typical Fall Time (ns): 39 Typical Rise Time (ns): 52 Typical Turn-Off Delay Time (ns): 31 Typical Turn-On Delay Time (ns): 12 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 3.7 Maximum Pulsed Drain Current @ TC=25°C (A): 48 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 40 Typical Gate Plateau Voltage (V): 6.8 Typical Reverse Recovery Time (ns): 120 Maximum Diode Forward Voltage (V): 6.3 Minimum Gate Resistance (Ohm): 0.4 Maximum Gate Resistance (Ohm): 3.3 Maximum Positive Gate Source Voltage (V): 20 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelIRF9530STRLPBF
Part numberIRF9530STRLPBF
Items per pack25
LabelVishay
ManufacturerVishay
View on Amazon (paid link)