SI1050X-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products | DigiKey

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 8 Maximum Gate Source Voltage (V): ±5 Maximum Gate Threshold Voltage (V): 9 Maximum Continuous Drain Current (A): 1.34 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 86@4.5V Typical Gate Charge @ Vgs (nC): 7.7@5V|7.1@4.5V Typical Gate to Drain Charge (nC): 1.69 Typical Gate to Source Charge (nC): 1.14 Typical Reverse Recovery Charge (nC): 3.7 Typical Input Capacitance @ Vds (pF): 585@4V Typical Output Capacitance (pF): 190 Maximum Power Dissipation (mW): 236 Typical Fall Time (ns): 6 Typical Rise Time (ns): 35 Typical Turn-Off Delay Time (ns): 25 Typical Turn-On Delay Time (ns): 6.8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: SC-89 Pin Count: 6 Standard Package Name: SC Mounting: Surface Mount Package Height: 0.6(Max) Package Length: 1.7(Max) Package Width: 1.2 PCB changed: 6