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Vishay Siliconix . IRFSL9N60APBF

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Attributes

Brand name, Manufacturer nameVishay Siliconix
ManufacturerVishay Siliconix VISHAY SILICONIX Vishay Vishay / Siliconix
atoms, minimum, moq, tierMinQty11
MPN, Part Number, Keyword, ModelNumber, Model_number, PartNumber, Part_numberIRFSL9N60APBF
multiple, tierMinQty61000
qtyInStock958
SKUIRFSL9N60APBF-ND
tierMinQty210
tierMinQty3, Number_of_items25
tierMinQty4100
tierMinQty5500
tierMinQty72500
tierMinQty85000
tierPrice12.72000
tierPrice22.44400
tierPrice32.31080
tierPrice41.84860
tierPrice51.64320
tierPrice61.40699
tierPrice71.38645
tierPrice81.26321
Product Group, ProductGroupBISS
ASINB00LWLOI6I B00LWLONX6 B00LWLOQY2
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00HKIB87E B00LWLOI6I B00LWLOM4G B00LWLONX6 B00LWLOQY2 B09T61F6XS
BrandVishay Vishay / Siliconix
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 844-IRFSL9N60APBF X10 MS 844-IRFSL9N60APBF X50
ClassificationId306919011
DisplayNameMOSFET
FeatureManufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 9.2 A Rds On - Drain-Source Resistance: 750 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 170 W Mounting Style: Through Hole
Height150 73 75
Identifier6098011057094
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameVishay IRFSL9N60APBF, Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262 (25 Items)
Item_type_keywordmosfet-transistors
Label, Man, Publisher, StudioVISHAY SILICONIX Vishay / Siliconix
Linkhttps://m.media-amazon.com/images/I/112C6Z+d1eL._SL75_.jpg https://m.media-amazon.com/images/I/112C6Z+d1eL.jpg
MaterialVishay
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant ECCN (US): EAR99 Part Status: Obsolete HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 9.2 Maximum Drain Source Resistance (mOhm): 750@10V Typical Gate Charge @ Vgs (nC): 49(Max)@10V Typical Gate Charge @ 10V (nC): 49(Max) Typical Input Capacitance @ Vds (pF): 1400@25V Maximum Power Dissipation (mW): 170000 Typical Fall Time (ns): 22 Typical Rise Time (ns): 25 Typical Turn-Off Delay Time (ns): 30 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-262 Pin Count: 3 Standard Package Name: I2PAK Mounting: Through Hole Package Height: 9.65(Max) Package Length: 10.67(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole
Product_site_launch_date2020-07-23T20:53:24.409Z
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET N-Chan 600V 9.2 Amp (1 piece) MOSFET N-Chan 600V 9.2 Amp (10 pieces) MOSFET N-Chan 600V 9.2 Amp (100 pieces) MOSFET N-Chan 600V 9.2 Amp (5 pieces) MOSFET N-Chan 600V 9.2 Amp (50 pieces)
Typeean
URLhttp://ecx.images-amazon.com/images/I/21MUAfcXcpL._SL75_.jpg
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625
Width150 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-KeyIRFSL9N60APBF-ND195810001 @ $2.72, 10 @ $2.44, 25 @ $2.31, 100 @ $1.85, 500 @ $1.64, 1000 @ $1.41, 2500 @ $1.39, 5000 @ $1.26
Newark63J7029100010001 @ $1.87
1SourceIRFSL9N60APBF11
HotendaH18143011233811 @ $2.72, 10 @ $2.44, 25 @ $2.31, 100 @ $2.00, 250 @ $1.90, 500 @ $1.70
Win SourceIRFSL9N60APBF19401
Future Electronics5436241100010001000 @ $2.32, 50 @ $1.77, 100 @ $1.68, 250 @ $1.58, 500 @ $1.51
swatee.comIRFSL9N60APBF125511 @ $5.36
iodPartsIRFSL9N60APBF11
Digi-Key812128100054210001 @ $3.44, 10 @ $3.09, 100 @ $2.53, 500 @ $2.16, 1000 @ $1.95
GalcoIRFSL9N60APBF-VISH100010001 @ $1.39

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET N-Chan 600V 9.2 Amp (1 piece)
Brand: Vishay / Siliconix
Catalog
CategoryIndustrial & Scientific
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVISHAY SILICONIX
View on Amazon (paid link)
MOSFET N-Chan 600V 9.2 Amp (10 pieces)
Brand: Vishay / Siliconix
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberIRFSL9N60APBF
LabelVishay / Siliconix
ManufacturerVishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 9.2 A Rds On - Drain-Source Resistance: 750 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 170 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET N-Chan 600V 9.2 Amp (100 pieces)
Catalog
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET N-Chan 600V 9.2 Amp (5 pieces)
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberIRFSL9N60APBF
LabelVISHAY SILICONIX
ManufacturerVISHAY SILICONIX
Catalog
CategoryIndustrial & Scientific
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET N-Chan 600V 9.2 Amp (50 pieces)
Brand: Vishay / Siliconix
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberIRFSL9N60APBF
LabelVishay / Siliconix
ManufacturerVishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 9.2 A Rds On - Drain-Source Resistance: 750 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 170 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIRFSL9N60APBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
Vishay IRFSL9N60APBF, Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262 (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Obsolete HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 9.2 Maximum Drain Source Resistance (mOhm): 750@10V Typical Gate Charge @ Vgs (nC): 49(Max)@10V Typical Gate Charge @ 10V (nC): 49(Max) Typical Input Capacitance @ Vds (pF): 1400@25V Maximum Power Dissipation (mW): 170000 Typical Fall Time (ns): 22 Typical Rise Time (ns): 25 Typical Turn-Off Delay Time (ns): 30 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-262 Pin Count: 3 Standard Package Name: I2PAK Mounting: Through Hole Package Height: 9.65(Max) Package Length: 10.67(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole
View on Amazon (paid link)