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IMW120R090M1HXKSA1 Infineon Technologies | Discrete Semiconductor Products | DigiKey Marketplace

Infineon Technologies . IMW120R090M1HXKSA1

Attributes

Brand name, Manufacturer name, Manufacturer, MfrInfineon Technologies
Extra Product NameIMW120R090M1HXKSA1 Infineon Technologies | Discrete Semiconductor Products | DigiKey Marketplace
atoms, moq, multiple, tierMinQty11
extraShipping12.0
MPNIMW120R090M1HXKSA1
packaging, PackageTube
qtyInStock225
SKU10296198
snippetN-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-3-41
tierMinQty210
tierMinQty3100
tierPrice115.122499999999999
tierPrice213.9035
tierPrice312.00623
CategoryDiscrete Semiconductor Products
SeriesCoolSiC?
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25?C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 18 V
Vgs (Max)+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds707 pF @ 800 V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55?C ~ 175?C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package / CaseTO-247-3
Base Product NumberIMW120

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key10296198122511 @ $15.12, 10 @ $13.90, 100 @ $12.01
Future Electronics4116341240240240 @ $11.35
Newark29AH10331108311 @ $10.91, 10 @ $10.26, 25 @ $9.60, 50 @ $8.95, 100 @ $8.53, 480 @ $8.13
iodPartsIMW120R090M1HXKSA111
TMEIMW120R090M1HXKSA1111 @ $16.34, 3 @ $14.73, 10 @ $12.98, 30 @ $11.65, 100 @ $10.87