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IGW50N65H5FKSA1 Infineon Technologies | Discrete Semiconductor Products | DigiKey

Infineon Technologies . IGW50N65H5FKSA1

Attributes

Brand name, Manufacturer name, Manufacturer, Mfr, Brand, Label, Man, Publisher, StudioInfineon Technologies
Extra Product NameIGW50N65H5FKSA1 Infineon Technologies | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extendedLead52 Weeks
extraShipping0
MPN, Part Number, PartNumberIGW50N65H5FKSA1
qtyInStock185
SKU13443207
tierMinQty210
tierMinQty3100
tierMinQty4500
tierPrice14.5195
tierPrice24.06065
tierPrice33.3267199999999995
tierPrice42.9669999999999996
Product Group, ProductGroupBISS
CategoryDiscrete Semiconductor Products
SeriesTrenchStop?
PackageTube
Part StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)150 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max305 W
Switching Energy520?J (on), 180?J (off)
Input TypeStandard
Gate Charge120 nC
Td (on/off) @ 25?C21ns/180ns
Test Condition400V, 25A, 12Ohm, 15V
Operating Temperature-40?C ~ 175?C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3
Base Product NumberIGW50N65
AsinB00LWOX6CW B00LWOXA28 B00LWOXDMK B00M2DEEEG
Case, PackageQuantity1 10 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IGW50N65H5FKSA1 X1 MS 726-IGW50N65H5FKSA1 X10 MS 726-IGW50N65H5FKSA1 X5 MS 726-IGW50N65H5FKSA1 X50
FeatureManufacturer: Infineon Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 305 W Maximum Operating Temperature: + 175 C Package / Case: TO-247-3 Packaging: Tube
ProductTypeNameELECTRONIC_COMPONENT
TitleIGBT Transistors IGBT PRODUCTS (1 piece) IGBT Transistors IGBT PRODUCTS (10 pieces) IGBT Transistors IGBT PRODUCTS (5 pieces) IGBT Transistors IGBT PRODUCTS (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key13443207118511 @ $4.52, 10 @ $4.06, 100 @ $3.33, 500 @ $2.97
TMEIGW50N65H5FKSA1111 @ $6.89, 5 @ $5.92, 30 @ $4.75, 120 @ $4.27
HotendaH1848542119311 @ $3.33, 10 @ $2.99, 100 @ $2.45, 500 @ $2.08
RS Delivers145-91693011703030 @ $3.11
Future Electronics4114085240240240 @ $2.02, 480 @ $1.92
swatee.comIGW50N65H5FKSA1124611 @ $12.08
Digi-Key44965385005001 @ $4.52, 10 @ $4.06, 100 @ $3.33, 500 @ $2.97
RS Delivers110-7157134411 @ $5.53
RS Delivers110-7157P134411 @ $5.53

Related on Amazon

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IGBT Transistors IGBT PRODUCTS (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 305 W Maximum Operating Temperature: + 175 C Package / Case: TO-247-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIGW50N65H5FKSA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
IGBT Transistors IGBT PRODUCTS (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 305 W Maximum Operating Temperature: + 175 C Package / Case: TO-247-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIGW50N65H5FKSA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
IGBT Transistors IGBT PRODUCTS (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 305 W Maximum Operating Temperature: + 175 C Package / Case: TO-247-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIGW50N65H5FKSA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
IGBT Transistors IGBT PRODUCTS (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 305 W Maximum Operating Temperature: + 175 C Package / Case: TO-247-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIGW50N65H5FKSA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)