As an Amazon Associate, we earn from qualifying purchases.

Infineon BSS306NH6327XT

Gallery

Attributes

Brand name, Manufacturer nameInfineon
ManufacturerInfineon Infineon Technologies
Extra Product NameInfineon BSS306NH6327XT
moq, multiple, tierMinQty11
MPN, SKU, Part Number, Manufacturer Part No, PartNumberBSS306NH6327XT
qtyInStock909
tierPrice10.78
Product Group, ProductGroupBISS
Qg - Gate Charge1.5 nC
PackagingReel
Typical Turn-Off Delay Time8.3 ns
Rds On - Drain-Source Resistance57 mOhms
Transistor PolarityN-Channel
Fall Time1.4 ns
SeriesBSS306
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Brand, Label, Man, Publisher, StudioInfineon Technologies
Vgs - Gate-Source Breakdown Voltage20 V
Package/CaseSOT-23-3
ConfigurationSingle
Alternate Part No726-BSS306NH6327XTSA
Rise Time2.3 ns
Id - Continuous Drain Current2.3 A
Vds - Drain-Source Breakdown Voltage30 V
Part # AliasesBSS306NH6327XTSA1 SP000928940
Product CategoryMOSFET
Pd - Power Dissipation500 mW
AsinB00LWP5KA2 B00LWP5NUY B00LWP5QM4 B00LWP5SWM B00M2DOXXI
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-BSS306NH6327XTSA X1 MS 726-BSS306NH6327XTSA X10 MS 726-BSS306NH6327XTSA X100 MS 726-BSS306NH6327XTSA X5 MS 726-BSS306NH6327XTSA X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 57 mOhms Configuration: Single Qg - Gate Charge: 1.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 500 mW Mounting Style: SMD/SMT
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET OptiMOS 2 Small Signal Transistor (1 piece) MOSFET OptiMOS 2 Small Signal Transistor (10 pieces) MOSFET OptiMOS 2 Small Signal Transistor (100 pieces) MOSFET OptiMOS 2 Small Signal Transistor (5 pieces) MOSFET OptiMOS 2 Small Signal Transistor (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
swatee.comBSS306NH6327XT190911 @ $0.78

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET OptiMOS 2 Small Signal Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 57 mOhms Configuration: Single Qg - Gate Charge: 1.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 500 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBSS306NH6327XT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS 2 Small Signal Transistor (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 57 mOhms Configuration: Single Qg - Gate Charge: 1.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 500 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBSS306NH6327XT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS 2 Small Signal Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 57 mOhms Configuration: Single Qg - Gate Charge: 1.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 500 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBSS306NH6327XT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS 2 Small Signal Transistor (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 57 mOhms Configuration: Single Qg - Gate Charge: 1.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 500 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBSS306NH6327XT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS 2 Small Signal Transistor (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 57 mOhms Configuration: Single Qg - Gate Charge: 1.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 500 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBSS306NH6327XT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)