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INFINEON TECHNOLOGIES BFP650H6327 | Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343

INFINEON TECHNOLOGIES . BFP650H6327

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Attributes

Brand name, Manufacturer nameINFINEON TECHNOLOGIES
ManufacturerINFINEON TECHNOLOGIES Infineon Technologies
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Bipolar transistors
CategoryL4Single bipolar transistors
Extra Product NameINFINEON TECHNOLOGIES BFP650H6327 | Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
atoms, moq, multiple, tierMinQty11
jsonUrlData4997301ab27ec225817349aefe87be4a.
jsonUrlData2ff388aa4786983661697
keywordsINFINEON TECHNOLOGIES, BFP650H6327, Semiconductors, Transistors, Bipolar transistors, Single bipolar transistors, NPN SMD transistors
MPNBFP650H6327 BFP 650 H6327
qtyInStock2923
SKUBFP650H6327
snippetINFINEON TECHNOLOGIES BFP650H6327 | Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT34
tierMinQty25
tierMinQty325
tierMinQty4100
tierMinQty5, Size500
tierPrice10.7689
tierPrice20.5525
tierPrice30.4877
tierPrice40.4383
tierPrice50.4097
Part Number, PartNumberBFP 650 H6327
Product GroupBISS
Type of transistorNPN
TechnologySiGe:C
Polarisationbipolar
Kind of transistorRF
Collector-emitter voltage13V
Collector current0.15A
Power dissipation0.5W
CaseSOT343 1 10 100 50 500
MountingSMD
Kind of packagereel,
Frequency42GHz
ASINB00HKI3W1E B00LWOF6NE B00LWOFAIK B00LWOFKLW
AsinB00HKI3W1E B00LWOF6NE B00LWOFAIK B00LWOFKLW B00LWOFNPU
Brand, Label, Man, Publisher, StudioInfineon Technologies
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-BFP650H6327 X1 MS 726-BFP650H6327 X10 MS 726-BFP650H6327 X100 MS 726-BFP650H6327 X50 MS 726-BFP650H6327 X500
FeatureManufacturer: Infineon Product Category: RF Transistors RoHS: Type: RF Silicon Germanium Maximum Operating Frequency: 37 GHz Collector- Emitter Voltage VCEO Max: 4 V Emitter- Base Voltage VEBO: 1.2 V Continuous Collector Current: 150 mA Power Dissipation: 500 mW Mounting Style: SMD/SMT Package / Case: SOT-343 Packaging: Reel Brand: Infineon Technologies Series:
Height53
PackageQuantity1 10 100 50 500
ProductGroupBISS BISS Basic
ProductTypeNameBISS ELECTRONIC_COMPONENT
TitleTransistors RF Bipolar RF BIP TRANSISTOR (1 piece) Transistors RF Bipolar RF BIP TRANSISTOR (10 pieces) Transistors RF Bipolar RF BIP TRANSISTOR (100 pieces) Transistors RF Bipolar RF BIP TRANSISTOR (50 pieces) Transistors RF Bipolar RF BIP TRANSISTOR (500 pieces)
URLhttp://ecx.images-amazon.com/images/I/31geIZdW7YL._SL75_.jpg http://ecx.images-amazon.com/images/I/31kjiTof44L._SL75_.jpg
Unitspixels pounds
Weight0.000625
Width75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEBFP650H63271292311 @ $0.77, 5 @ $0.55, 25 @ $0.49, 100 @ $0.44, 500 @ $0.41
HotendaH19177631600011 @ $0.38
Win SourceBFP650H6327110001
swatee.comBFP 650 H63271978611 @ $2.02

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Transistors RF Bipolar RF BIP TRANSISTOR (1 piece)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberBFP 650 H6327
LabelInfineon Technologies
ManufacturerInfineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: RF Transistors RoHS: Type: RF Silicon Germanium Maximum Operating Frequency: 37 GHz Collector- Emitter Voltage VCEO Max: 4 V Emitter- Base Voltage VEBO: 1.2 V Continuous Collector Current: 150 mA Power Dissipation: 500 mW Mounting Style: SMD/SMT Package / Case: SOT-343 Packaging: Reel Brand: Infineon Technologies Series:
CategoryIndustrial & Scientific
MPNBFP 650 H6327
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
Transistors RF Bipolar RF BIP TRANSISTOR (10 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberBFP 650 H6327
LabelInfineon Technologies
ManufacturerInfineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: RF Transistors RoHS: Type: RF Silicon Germanium Maximum Operating Frequency: 37 GHz Collector- Emitter Voltage VCEO Max: 4 V Emitter- Base Voltage VEBO: 1.2 V Continuous Collector Current: 150 mA Power Dissipation: 500 mW Mounting Style: SMD/SMT Package / Case: SOT-343 Packaging: Reel Brand: Infineon Technologies Series:
CategoryIndustrial & Scientific
MPNBFP 650 H6327
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
Transistors RF Bipolar RF BIP TRANSISTOR (100 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberBFP 650 H6327
LabelInfineon Technologies
ManufacturerInfineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: RF Transistors RoHS: Type: RF Silicon Germanium Maximum Operating Frequency: 37 GHz Collector- Emitter Voltage VCEO Max: 4 V Emitter- Base Voltage VEBO: 1.2 V Continuous Collector Current: 150 mA Power Dissipation: 500 mW Mounting Style: SMD/SMT Package / Case: SOT-343 Packaging: Reel Brand: Infineon Technologies Series:
CategoryIndustrial & Scientific
MPNBFP 650 H6327
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
Transistors RF Bipolar RF BIP TRANSISTOR (50 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberBFP 650 H6327
LabelInfineon Technologies
ManufacturerInfineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: RF Transistors RoHS: Type: RF Silicon Germanium Maximum Operating Frequency: 37 GHz Collector- Emitter Voltage VCEO Max: 4 V Emitter- Base Voltage VEBO: 1.2 V Continuous Collector Current: 150 mA Power Dissipation: 500 mW Mounting Style: SMD/SMT Package / Case: SOT-343 Packaging: Reel Brand: Infineon Technologies Series:
CategoryIndustrial & Scientific
MPNBFP 650 H6327
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
Transistors RF Bipolar RF BIP TRANSISTOR (500 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: RF Transistors RoHS: Type: RF Silicon Germanium Maximum Operating Frequency: 37 GHz Collector- Emitter Voltage VCEO Max: 4 V Emitter- Base Voltage VEBO: 1.2 V Continuous Collector Current: 150 mA Power Dissipation: 500 mW Mounting Style: SMD/SMT Package / Case: SOT-343 Packaging: Reel Brand: Infineon Technologies Series:
CategoryIndustrial & Scientific
MPNBFP 650 H6327
Product groupBISS
Product typeBISS
ManufacturerInfineon Technologies
View on Amazon (paid link)