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Infineon Igbt Module, Chopper, 1200V - BSM75GAR120DN2

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Attributes

Brand name, Manufacturer nameINFINEON
ManufacturerINFINEON Infineon Technologies
CategoryL1Semiconductors - Discretes
CategoryL2IGBTs
CategoryL3IGBT Modules
Extra Product NameInfineon Igbt Module, Chopper, 1200V - BSM75GAR120DN2
jsonUrlDataSemiconductors - Discretes > IGBTs > IGBT Modules
moq, multiple, tierMinQty1, Case, PackageQuantity1
MPN, Part Number, PartNumberBSM75GAR120DN2
qtyInStock0
SKU61M5057
tierPrice192.59
urlhttps://www.newark.com/61M5057?CMP=AFC-DATAALCHEMY
Product Group, ProductGroupBISS
AsinB00MEJ911E
Brand, Label, Man, Publisher, StudioInfineon Technologies
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 641-BSM75GAR120DN2
FeatureManufacturer: Infineon Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 100 A Gate-Emitter Leakage Current: 400 nA Power Dissipation: 625 W Maximum Operating Temperature: + 150 C Package / Case: IS4 (34 mm )-5
ProductTypeNameELECTRONIC_COMPONENT
TitleIGBT Transistors 1200V 100A GAR CH

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark61M5057111 @ $92.59
RadwellBSM75GAR120DN211
GalcoBSM75GAR120DN211
GalcoBSM75GAR120DN2-EUPC111 @ $92.51

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IGBT Transistors 1200V 100A GAR CH
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 100 A Gate-Emitter Leakage Current: 400 nA Power Dissipation: 625 W Maximum Operating Temperature: + 150 C Package / Case: IS4 (34 mm )-5
CategoryIndustrial & Scientific
MPNBSM75GAR120DN2
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
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