INFINEON TECHNOLOGIES FS50R12KE3 | Module: IGBT; transistor/transistor; IGBT three-phase bridge
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| TME | FS50R12KE3 | 1 | 1 | ||
 Radwell | FS50R12KE3 | 1 | 15 | 1 | |
 Galco | FS50R12KE3-EUPC | 15 | 44 | 15 | 1 @ $105.42 |
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IGBT Modules 1200V 50A 3-PHASE
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: IGBT Modules RoHS: Product: IGBT Silicon Modules Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 75 A Gate-Emitter Leakage Current: 400 nA Power Dissipation: 270 W Maximum Operating Temperature: + 125 C Package / Case: EconoPACK 2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | FS50R12KE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
Infineon FS50R12KE3 3-Phase 1200V 50A Chassis Mount IGBT Module, New
Brand: Infineon
Listing
| Product group | BISS Basic |
|---|---|
| Product type | HARDWARE |
| Model | FS50R12KE3 |
| Part number | FS50R12KE3 |
| Label | Infineon |
| Manufacturer | Infineon |