SI7336ADP-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products | DigiKey
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| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 3758703 | 1 | 1 | 1 @ $2.16, 10 @ $1.95, 100 @ $1.56, 500 @ $1.29, 1000 @ $1.10, 3000 @ $1.10 | |
| 1Source | SI7336ADP-T1-GE3 | 1 | 1 | ||
| Hotenda | H1807116 | 1 | 33000 | 1 | 1 @ $0.60 |
| Win Source | SI7336ADP-T1-GE3 | 66 | 994 | 66 | 66 @ $0.76, 156 @ $0.64, 588 @ $0.51 |
![]() swatee.com | SI7336ADP-T1-GE3 | 1 | 4152 | 1 | 1 @ $4.76 |
| iodParts | SI7336ADP-T1-GE3 | 1 | 30000 | 1 | |
![]() AmazonTP | B00HKIM5YO | 1 | 1 | 1 @ $7.93 | |
![]() AmazonUNK | B00HKIM5YO | 1 | -2 | 1 | 1 @ $7.93 |
| Digi-Key | 2622465 | 1 | 1 | 1 @ $2.16, 10 @ $1.95, 100 @ $1.56, 500 @ $1.29, 1000 @ $1.10 | |
| Newark | 38AH2385 | 3000 | 3000 | 2000 @ $1.65, 4000 @ $1.54, 8000 @ $1.43, 12000 @ $1.38, 20000 @ $1.36 | |
![]() Newark | 12R3257 | 3000 | 3000 | 25 @ $1.93 | |
| Newark | 33P5393 | 1 | 1 | ||
| Digi-Key | 3758617 | 1 | 31093 | 1 | 1 @ $1.63, 10 @ $1.47, 25 @ $1.38, 100 @ $1.18, 500 @ $0.97, 1000 @ $0.83 |
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Vishay N Channel Mosfet - SI7336ADP-T1-GE3
Brand: Vishay
N CHANNEL MOSFET; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.0024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; No. of Pins:8Pins RoHS Compliant: Yes
Details
- <b>Price For:</b> Pack of 1<b>Order Unit:</b> Tape & Reel Full 1 <b>Continuous Drain Current Id:</b>: 30 <b>Drain Source Voltage Vds:</b>: 30 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0024 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 5.4 <b>Rds(on) Test Voltage Vgs:</b>: 4.5 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 1
- <b>Transistor Case Style:</b>: PowerPAK SO <b>Transistor Polarity:</b>: N Channel
Listing
| Product group | BISS Basic |
|---|---|
| Product type | HARDWARE |
| Model | SI7336ADP-T1-GE3 |
| Part number | SI7336ADP-T1-GE3 |
| Items per pack | 1 |
| Label | Vishay |
| Manufacturer | Vishay |
Catalog
| Feature | VISHAY SILICONIX SI7336ADP-T1-GE3 N CH MOSFET |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7336ADP-T1-GE3 |
| Product group | BISS Basic |
| Product type | BISS |
| Manufacturer | Vishay / Siliconix |
SILICONIX (VISHAY) SI7336ADP-T1-GE3 Si7336ADP Series 30 V 3 mohm Surface Mount N-Channel Mosfet - POWERPAK-SO-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Si7336ADP Series 30 V 3 mohm Surface Mount N-Channel Mosfet - POWERPAK-SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 30 V
- Drain-sourceOnResistance-Max: 3 mΩ
- QgGateCharge: 36 nC
- RatedPowerDissipation(P): 5.4 W
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI7336ADP-T1-GE3 |
| Part number | SI7336ADP-T1-GE3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7336ADP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | SILICONIX (VISHAY) |
Mosfet 30V 30A 5.4W 3.0Mohm @ 10V
Brand: Vishay / Siliconix
Listing
| Product group | BISS |
|---|---|
| Product type | LAB_SUPPLY |
| Part number | SI7336ADP-T1-GE3 |
| Items per pack | 500 |
| Label | Vishay Siliconix |
| Manufacturer | Vishay Siliconix |
Catalog
| Feature | 10V |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7336ADP-T1-GE3 |
| Product group | BISS |
| Product type | LAB_SUPPLY |
| Manufacturer | Vishay Siliconix |
Vishay SI7336ADP-T1-GE3, Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 3 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 30 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 3@10V Typical Gate Charge @ Vgs (nC): 36@4.5V Typical Gate to Drain Charge (nC): 10@4.5V Typical Gate to Source Charge (nC): 18 Typical Input Capacitance @ Vds (pF): 5600@15V Typical Reverse Transfer Capacitance @ Vds (pF): 415@15V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 860 Maximum Power Dissipation (mW): 5400 Typical Fall Time (ns): 32 Typical Rise Time (ns): 16 Typical Turn-Off Delay Time (ns): 90 Typical Turn-On Delay Time (ns): 24 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 5.4 Maximum Pulsed Drain Current @ TC=25°C (A): 70 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 65 Typical Diode Forward Voltage (V): 0.72 Typical Gate Plateau Voltage (V): 3.4 Typical Reverse Recovery Time (ns): 45 Maximum Diode Forward Voltage (V): 1.1 Minimum Gate Resistance (Ohm): 0.6 Maximum Gate Resistance (Ohm): 2 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 30 Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead


