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SI7336ADP-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products | DigiKey

Attributes

Brand name, Manufacturer name, MfrVishay Siliconix
ManufacturerVishay Siliconix SILICONIX (VISHAY) Vishay Vishay / Siliconix
Extra Product NameSI7336ADP-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty1, Item_package_quantity, PackageQuantity1
extraShipping, qtyInStock0
MPN, Part Number, Model, Keyword, ModelNumber, Model_number, PartNumber, Part_numberSI7336ADP-T1-GE3
packagingCut Tape (CT) & Digi-Reel?
SKU3758703
snippetN-Channel 30 V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK? SO-8
tariff1.15
tierMinQty210
tierMinQty3100
tierMinQty4500
tierMinQty51,000
tierMinQty63,000
tierPrice12.162
tierPrice21.94695
tierPrice31.5649199999999999
tierPrice41.2857459999999998
tierPrice5, tierPrice61.1020679999999998
Product GroupBISS
CategoryDiscrete Semiconductor Products
SeriesTrenchFET?
PackageTape & Reel (TR)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25?C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id3V @ 250?A
Gate Charge (Qg) (Max) @ Vgs50 nC @ 4.5 V
Vgs (Max)?20V
Input Capacitance (Ciss) (Max) @ Vds5600 pF @ 15 V
FET Feature-
Power Dissipation (Max)5.4W (Ta)
Operating Temperature-55?C ~ 150?C (TJ)
Mounting TypeSurface Mount
Supplier Device Package, Package / CasePowerPAK? SO-8
Base Product NumberSI7336
ASINB00HKIM5YO B0748MGLSP B078SN46TH
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
AsinB00HKIM5YO B0748MGLSP B078SN46TH B09T5Z4FW9
BrandSILICONIX (VISHAY) Vishay Vishay / Siliconix
Bullet_point<b>Price For:</b> Pack of 1<b>Order Unit:</b> Tape &amp; Reel Full&nbsp;1 <b>Continuous Drain Current Id:</b>: 30 <b>Drain Source Voltage Vds:</b>: 30 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0024 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 5.4 <b>Rds(on) Test Voltage Vgs:</b>: 4.5 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 1 <b>Transistor Case Style:</b>: PowerPAK SO <b>Transistor Polarity:</b>: N Channel ChannelType: N-Channel Drain-sourceOnResistance-Max: 3 mΩ QgGateCharge: 36 nC RatedPowerDissipation(P): 5.4 W VoltageDraintoSource: 30 V
Case, NumberOfItems1 3000 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
ClassificationId306919011
DisplayNameMOSFET
Feature10V ChannelType: N-Channel VISHAY SILICONIX SI7336ADP-T1-GE3 N CH MOSFET
Height150 243 500 56 75
Identifier6098005169178
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameSILICONIX (VISHAY) SI7336ADP-T1-GE3 Si7336ADP Series 30 V 3 mohm Surface Mount N-Channel Mosfet - POWERPAK-SO-8 - 3000 item(s) Vishay N Channel Mosfet - SI7336ADP-T1-GE3 Vishay SI7336ADP-T1-GE3, Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R (25 Items)
Item_type_keywordmosfet-transistors
Item_weight0.04 0.31
Label, Publisher, StudioSILICONIX (VISHAY) Vishay Vishay / Siliconix Vishay Siliconix
Linkhttps://m.media-amazon.com/images/I/11Wo7Lolq7L._SL75_.jpg https://m.media-amazon.com/images/I/11Wo7Lolq7L.jpg https://m.media-amazon.com/images/I/211YGjsq57L._SL75_.jpg https://m.media-amazon.com/images/I/211YGjsq57L.jpg https://m.media-amazon.com/images/I/41NJNNHFfDL._SL75_.jpg https://m.media-amazon.com/images/I/41NJNNHFfDL.jpg
ManSILICONIX (VISHAY) Vishay / Siliconix Vishay Siliconix
MaterialVishay
MaterialTypeMosfet
Number_of_items1 25 3000
ProductGroupBISS BISS Basic
ProductTypeELECTRONIC_COMPONENT HARDWARE
ProductTypeNameBISS ELECTRONIC_COMPONENT HARDWARE LAB_SUPPLY
Product_descriptionEU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 3 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 30 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 3@10V Typical Gate Charge @ Vgs (nC): 36@4.5V Typical Gate to Drain Charge (nC): 10@4.5V Typical Gate to Source Charge (nC): 18 Typical Input Capacitance @ Vds (pF): 5600@15V Typical Reverse Transfer Capacitance @ Vds (pF): 415@15V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 860 Maximum Power Dissipation (mW): 5400 Typical Fall Time (ns): 32 Typical Rise Time (ns): 16 Typical Turn-Off Delay Time (ns): 90 Typical Turn-On Delay Time (ns): 24 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 5.4 Maximum Pulsed Drain Current @ TC=25°C (A): 70 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 65 Typical Diode Forward Voltage (V): 0.72 Typical Gate Plateau Voltage (V): 3.4 Typical Reverse Recovery Time (ns): 45 Maximum Diode Forward Voltage (V): 1.1 Minimum Gate Resistance (Ohm): 0.6 Maximum Gate Resistance (Ohm): 2 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 30 Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead N CHANNEL MOSFET; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.0024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; No. of Pins:8Pins RoHS Compliant: Yes Si7336ADP Series 30 V 3 mohm Surface Mount N-Channel Mosfet - POWERPAK-SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-06-30T16:29:48.548Z 2020-07-23T20:53:20.284Z 2021-02-19T16:53:32.449Z
Size1 Piece
Supplier_declared_dg_hz_regulationunknown
TitleMOSFET 30V 30A 5.4W 3.0mohm @ 10V (1 piece) Mosfet 30V 30A 5.4W 3.0Mohm @ 10V SILICONIX (VISHAY) SI7336ADP-T1-GE3 Si7336ADP Series 30 V 3 mohm Surface Mount N-Channel Mosfet - POWERPAK-SO-8 - 3000 item(s) Vishay N Channel Mosfet - SI7336ADP-T1-GE3
Typeean
URLhttp://ecx.images-amazon.com/images/I/21DD0L1rBmL._SL75_.jpg https://m.media-amazon.com/images/I/211YGjsq57L._SL75_.jpg https://m.media-amazon.com/images/I/41NJNNHFfDL._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625 0.0006834330122 0.04
Width150 323 500 72 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key3758703111 @ $2.16, 10 @ $1.95, 100 @ $1.56, 500 @ $1.29, 1000 @ $1.10, 3000 @ $1.10
1SourceSI7336ADP-T1-GE311
HotendaH180711613300011 @ $0.60
Win SourceSI7336ADP-T1-GE3669946666 @ $0.76, 156 @ $0.64, 588 @ $0.51
swatee.comSI7336ADP-T1-GE31415211 @ $4.76
iodPartsSI7336ADP-T1-GE31300001
AmazonTPB00HKIM5YO111 @ $7.93
AmazonUNKB00HKIM5YO1-211 @ $7.93
Digi-Key2622465111 @ $2.16, 10 @ $1.95, 100 @ $1.56, 500 @ $1.29, 1000 @ $1.10
Newark38AH2385300030002000 @ $1.65, 4000 @ $1.54, 8000 @ $1.43, 12000 @ $1.38, 20000 @ $1.36
Newark12R32573000300025 @ $1.93
Newark33P539311
Digi-Key375861713109311 @ $1.63, 10 @ $1.47, 25 @ $1.38, 100 @ $1.18, 500 @ $0.97, 1000 @ $0.83

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Vishay N Channel Mosfet - SI7336ADP-T1-GE3
Brand: Vishay
N CHANNEL MOSFET; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.0024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; No. of Pins:8Pins RoHS Compliant: Yes
Details
  • <b>Price For:</b> Pack of 1<b>Order Unit:</b> Tape &amp; Reel Full&nbsp;1 <b>Continuous Drain Current Id:</b>: 30 <b>Drain Source Voltage Vds:</b>: 30 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0024 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 5.4 <b>Rds(on) Test Voltage Vgs:</b>: 4.5 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 1
  • <b>Transistor Case Style:</b>: PowerPAK SO <b>Transistor Polarity:</b>: N Channel
Listing
Product groupBISS Basic
Product typeHARDWARE
ModelSI7336ADP-T1-GE3
Part numberSI7336ADP-T1-GE3
Items per pack1
LabelVishay
ManufacturerVishay
Catalog
FeatureVISHAY SILICONIX SI7336ADP-T1-GE3 N CH MOSFET
CategoryIndustrial & Scientific
MPNSI7336ADP-T1-GE3
Product groupBISS Basic
Product typeBISS
ManufacturerVishay / Siliconix
View on Amazon (paid link)
SILICONIX (VISHAY) SI7336ADP-T1-GE3 Si7336ADP Series 30 V 3 mohm Surface Mount N-Channel Mosfet - POWERPAK-SO-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Si7336ADP Series 30 V 3 mohm Surface Mount N-Channel Mosfet - POWERPAK-SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel
  • VoltageDraintoSource: 30 V
  • Drain-sourceOnResistance-Max: 3 mΩ
  • QgGateCharge: 36 nC
  • RatedPowerDissipation(P): 5.4 W
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelSI7336ADP-T1-GE3
Part numberSI7336ADP-T1-GE3
Items per pack3000
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
Catalog
FeatureChannelType: N-Channel
CategoryIndustrial & Scientific
MPNSI7336ADP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
Mosfet 30V 30A 5.4W 3.0Mohm @ 10V
Brand: Vishay / Siliconix
Listing
Product groupBISS
Product typeLAB_SUPPLY
Part numberSI7336ADP-T1-GE3
Items per pack500
LabelVishay Siliconix
ManufacturerVishay Siliconix
Catalog
Feature10V
CategoryIndustrial & Scientific
MPNSI7336ADP-T1-GE3
Product groupBISS
Product typeLAB_SUPPLY
ManufacturerVishay Siliconix
View on Amazon (paid link)
Vishay SI7336ADP-T1-GE3, Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 3 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 30 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 3@10V Typical Gate Charge @ Vgs (nC): 36@4.5V Typical Gate to Drain Charge (nC): 10@4.5V Typical Gate to Source Charge (nC): 18 Typical Input Capacitance @ Vds (pF): 5600@15V Typical Reverse Transfer Capacitance @ Vds (pF): 415@15V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 860 Maximum Power Dissipation (mW): 5400 Typical Fall Time (ns): 32 Typical Rise Time (ns): 16 Typical Turn-Off Delay Time (ns): 90 Typical Turn-On Delay Time (ns): 24 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 5.4 Maximum Pulsed Drain Current @ TC=25°C (A): 70 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 65 Typical Diode Forward Voltage (V): 0.72 Typical Gate Plateau Voltage (V): 3.4 Typical Reverse Recovery Time (ns): 45 Maximum Diode Forward Voltage (V): 1.1 Minimum Gate Resistance (Ohm): 0.6 Maximum Gate Resistance (Ohm): 2 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 30 Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead
View on Amazon (paid link)