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Toshiba Semiconductor and Storage . TK32E12N1,S1X

Toshiba Semiconductor and Storage . TK32E12N1,S1X

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Attributes

Brand name, Manufacturer nameToshiba Semiconductor and Storage
ManufacturerToshiba Semiconductor and Storage Toshiba
atoms, minimum, moq, tierMinQty11
MPN, Part Number, PartNumberTK32E12N1,S1X
multiple50
qtyInStock47
SKUTK32E12N1S1X-ND
tierMinQty210
tierMinQty325
tierMinQty4100
tierMinQty5500
tierMinQty61000
tierMinQty72500
tierMinQty85000
tierPrice11.33000
tierPrice21.18900
tierPrice31.12840
tierPrice40.84630
tierPrice50.71734
tierPrice60.58435
tierPrice70.57629
tierPrice80.52390
AsinB00HKZ7B1O B00LWOH5F6 B00LWOHDAI B00LWOHH6I B00LWOHKAG B00M2DQYTE
Brand, Label, Man, Publisher, StudioToshiba
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 757-TK32E12N1S1X X1 MS 757-TK32E12N1S1X X10 MS 757-TK32E12N1S1X X100 MS 757-TK32E12N1S1X X5 MS 757-TK32E12N1S1X X50
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C
ProductGroupBISS
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET N-Ch 60A 98W FET 120V 2000pF 34nC MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (1 piece) MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (10 pieces) MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (100 pieces) MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (5 pieces) MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-KeyTK32E12N1S1X-ND147501 @ $1.33, 10 @ $1.19, 25 @ $1.13, 100 @ $0.85, 500 @ $0.72, 1000 @ $0.58, 2500 @ $0.58, 5000 @ $0.52
HotendaH1822937131011 @ $1.41, 10 @ $1.25, 25 @ $1.13, 100 @ $0.99, 250 @ $0.87, 500 @ $0.77
swatee.comTK32E12N1,S1X1291011 @ $2.54
iodPartsTK32E12N1,S1X11
Digi-Key38210301511 @ $1.53, 10 @ $1.37, 100 @ $1.07, 500 @ $0.88, 1000 @ $0.70, 2000 @ $0.65, 5000 @ $0.62, 10000 @ $0.60

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MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC
Catalog
CategoryIndustrial & Scientific
MPNTK32E12N1,S1X
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (10 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK32E12N1,S1X
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (100 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK32E12N1,S1X
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (5 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK32E12N1,S1X
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (50 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK32E12N1,S1X
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC (1 piece)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK32E12N1,S1X
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)