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TK31N60W,S1VF Toshiba Semiconductor and Storage | Discrete Semiconductor Products | DigiKey

Toshiba Semiconductor and Storage . TK31N60W,S1VF

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Attributes

Brand name, Manufacturer name, MfrToshiba Semiconductor and Storage
ManufacturerToshiba Semiconductor and Storage Toshiba
Extra Product NameTK31N60W,S1VF Toshiba Semiconductor and Storage | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
MPN, Part Number, PartNumberTK31N60W,S1VF
qtyInStock50
SKUTK31N60WS1VF-ND
tierMinQty210
tierMinQty325
tierMinQty4100
tierMinQty5500
tierMinQty61,000
tierMinQty72,500
tierMinQty85,000
tierMinQty99,000
tierPrice18.04000
tierPrice27.26700
tierPrice36.92920
tierPrice45.74600
tierPrice55.07000
tierPrice64.56300
tierPrice74.39400
tierPrice84.15740
tierPrice94.05600
Product Group, ProductGroupBISS
CategoryDiscrete Semiconductor Products
SeriesTube
PackageActive
Part StatusN-Channel
FET TypeMOSFET (Metal Oxide)
Technology30.8A (Ta)
Current - Continuous Drain (Id) @ 25?C10V
Drive Voltage (Max Rds On, Min Rds On)88mOhm @ 15.4A, 10V
Rds On (Max) @ Id, Vgs3.7V @ 1.5mA
Vgs(th) (Max) @ Id?30V
Vgs (Max)Super Junction
FET Feature230W (Tc)
Power Dissipation (Max)150?C (TJ)
Operating TemperatureThrough Hole
Mounting TypeTO-247
Supplier Device PackageTO-247-3
Package / Case600 V
Drain to Source Voltage (Vdss)86 nC @ 10 V
Gate Charge (Qg) (Max) @ Vgs3000 pF @ 300 V
AsinB00LWOGW5U
Brand, Label, Man, Publisher, StudioToshiba
Case, PackageQuantity5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 757-TK31N60WS1VF X5
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 30.8 A Rds On - Drain-Source Resistance: 73 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 86 nC Maximum Operating Temperature: + 150 C
ProductTypeNameELECTRONIC_COMPONENT
Size5 Piece
TitleMOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-KeyTK31N60WS1VF-ND15011 @ $8.04, 10 @ $7.27, 25 @ $6.93, 100 @ $5.75, 500 @ $5.07, 1000 @ $4.56, 2500 @ $4.39, 5000 @ $4.16, 9000 @ $4.06
HotendaH18145901211 @ $8.45, 10 @ $7.61, 25 @ $6.93, 100 @ $6.25, 250 @ $5.75, 500 @ $5.24
Win SourceTK31N60W,S1VF11581
Newark10AH128711
swatee.comTK31N60W,S1VF113411 @ $12.68
Digi-Key3945695111 @ $8.85, 10 @ $7.99, 100 @ $6.62, 500 @ $5.76, 1000 @ $5.07

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MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF (5 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 30.8 A Rds On - Drain-Source Resistance: 73 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 86 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK31N60W,S1VF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
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