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APT50GN60BDQ2G APT/MICROSEMI Transistors - Jotrin Electronics

APT/MICROSEMI . APT50GN60BDQ2G

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Brand name, Manufacturer name, ManufacturerAPT/MICROSEMI
Extra Product NameAPT50GN60BDQ2G APT/MICROSEMI Transistors - Jotrin Electronics
keywordsAPT50GN60BDQ2G,APT/MICROSEMI ,TO-247,IGBT module,APT50GN60BDQ2G Datasheet PDF
moq, multiple1
MPNAPT50GN60BDQ2G
qtyInStock, In-stock208
SKUJT25-APT50GN60BDQ2G
snippetBuy APT50GN60BDQ2G APT/MICROSEMI , Learn more about APT50GN60BDQ2G Trans IGBT Chip N-CH 600V 107A, View the manufacturer, and stock, and datasheet pdf for the APT50GN60BDQ2G at Jotrin Electronics.
Package/CaseTO-247
Product CategoriesIGBT module
RoHs StatusGreen
Package CaseTO-247-3
Input TypeStandard
Mounting TypeThrough Hole
Supplier Device PackageTO-247 [B]
ConfigurationSingle
Power Max366W
Reverse Recovery Time trr-
Current Collector Ic Max107A
Voltage Collector Emitter Breakdown Max600V
IGBT TypeTrench Field Stop
Current Collector Pulsed Icm150A
Vce on Max Vge Ic1.85V @ 15V, 50A
Switching Energy1185?J (on), 1565?J (off)
Gate Charge325nC
Td on off 25?C20ns/230ns
Test Condition400V, 50A, 4.3 Ohm, 15V
Pd Power Dissipation366 W
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Collector Emitter Voltage VCEO Max600 V
Collector Emitter Saturation Voltage1.5 V
Continuous Collector Current at 25 C, Continuous Collector Current Ic Max107 A
Gate Emitter Leakage Current600 nA
Maximum Gate Emitter Voltage30 V

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